SPB11N60C3ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 11A TO263-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SPB11N60C3ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,977
Can ship immediately
Pricing:
- 1$3.33
- 1,000$1.82712
- 2,000$1.73577
- 5,000$1.67051
Quote It
Technical Details
- Series:CoolMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:380mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
MOSFET N-CH 60V 100A 8VSON
- 1: $2.88000
- 250: $1.68433
- 500: $1.47379
