IRFBG30PBF
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 1000V 3.1A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFBG30PBF Datasheet
-
ECAD Model
- Share
In Stock: 7,200
Can ship immediately
Pricing:
- 1$2.32
- 50$1.88011
- 100$1.69857
- 500$1.33575
- 1,000$1.11807
- 2,500$1.04552
- 5,000$1.00923
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):1000 V
- Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:5Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
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