IPT020N10N5ATMA1

Technical Details

• Series:OptiMOS™5
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:31A (Ta), 260A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:2mOhm @ 150A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 202µA

• Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):273W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-HSOF-8-1
• Package / Case:8-PowerSFN