IPP60R022S7XKSA1

Technical Details

• Series:CoolMOS™S7
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):12V
• Rds On (Max) @ Id, Vgs:22mOhm @ 23A, 12V
• Vgs(th) (Max) @ Id:4.5V @ 1.44mA

• Gate Charge (Qg) (Max) @ Vgs:150 nC @ 12 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5639 pF @ 300 V
• FET Feature:-
• Power Dissipation (Max):390W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-3-1
• Package / Case:TO-220-3