TP65H050WS
Transphorm
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 650V 34A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TP65H050WS Datasheet
-
ECAD Model
- Share
In Stock: 575
Can ship immediately
Pricing:
- 1$17.05
- 10$15.50191
- 30$14.33927
- 120$13.17663
- 270$12.01398
- 510$11.23889
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):12V
- Rds On (Max) @ Id, Vgs:60mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):119W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247-3
- Package / Case:TO-247-3
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