NTH4L020N120SC1

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:102A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 20V
• Vgs(th) (Max) @ Id:4.3V @ 20mA

• Gate Charge (Qg) (Max) @ Vgs:220 nC @ 20 V
• Vgs (Max):+25V, -15V
• Input Capacitance (Ciss) (Max) @ Vds:2943 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):510W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4
• Package / Case:TO-247-4