RZM001P02T2L

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
• Rds On (Max) @ Id, Vgs:3.8Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id:1V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):150mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:VMT3
• Package / Case:SOT-723