SIUD412ED-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 12V 500MA PPAK 0806
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIUD412ED-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 15,711
Can ship immediately
Pricing:
- 1$0.41
- 3,000$0.07656
- 6,000$0.06695
- 15,000$0.05735
- 30,000$0.05414
- 75,000$0.05094
- 150,000$0.04454
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:500mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:340mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:0.71 nC @ 4.5 V
- Vgs (Max):±5V
- Input Capacitance (Ciss) (Max) @ Vds:21 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):1.25W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 0806
- Package / Case:PowerPAK® 0806
