RYC002N05T316
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CHANNEL 50V 200MA SST3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RYC002N05T316 Datasheet
-
ECAD Model
- Share
In Stock: 28,843
Can ship immediately
Pricing:
- 1$0.46
- 3,000$0.08155
- 6,000$0.07339
- 15,000$0.06524
- 30,000$0.06116
- 75,000$0.05708
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):50 V
- Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V
- Rds On (Max) @ Id, Vgs:2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:26 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):350mW (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SST3
- Package / Case:TO-236-3, SC-59, SOT-23-3
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