SSM6K217FE,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 1.8A ES6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6K217FE,LF Datasheet
-
ECAD Model
- Share
In Stock: 39,667
Can ship immediately
Pricing:
- 1$0.38
- 4,000$0.10168
- 8,000$0.09551
- 12,000$0.08935
- 28,000$0.08627
Quote It
Technical Details
- Series:U-MOSVII-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
- Rds On (Max) @ Id, Vgs:195mOhm @ 1A, 8V
- Vgs(th) (Max) @ Id:1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.2 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:ES6
- Package / Case:SOT-563, SOT-666
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