IPN60R3K4CEATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 2.6A SOT223
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPN60R3K4CEATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 14,394
Can ship immediately
Pricing:
- 1$0.47
- 3,000$0.18981
- 6,000$0.17879
- 15,000$0.16777
- 30,000$0.16006
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Technical Details
- Series:CoolMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:93 pF @ 100 V
- FET Feature:Super Junction
- Power Dissipation (Max):5W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-SOT223
- Package / Case:SOT-223-3
