TSM900N06CW RPG
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CHANNEL 60V 11A SOT223
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM900N06CW RPG Datasheet
-
ECAD Model
- Share
In Stock: 8,768
Can ship immediately
Pricing:
- 1$0.5
- 2,500$0.15677
- 5,000$0.14667
- 12,500$0.1416
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:90mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):25W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223
- Package / Case:TO-261-4, TO-261AA
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