IRFM120ATF
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 2.3A SOT223-4
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFM120ATF Datasheet
-
ECAD Model
- Share
In Stock: 14,804
Can ship immediately
Pricing:
- 1$0.7
- 4,000$0.28113
- 8,000$0.26174
- 12,000$0.25204
- 28,000$0.24676
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:200mOhm @ 1.15A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.4W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223-4
- Package / Case:TO-261-4, TO-261AA
