IPN80R2K4P7ATMA1

Technical Details

• Series:CoolMOS™ P7
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):800 V
• Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:2.4Ohm @ 800mA, 10V
• Vgs(th) (Max) @ Id:3.5V @ 40µA

• Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 500 V
• FET Feature:-
• Power Dissipation (Max):6.3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT223
• Package / Case:TO-261-3