SIR616DP-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 20.2A PPAK SO-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIR616DP-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,427
Can ship immediately
Pricing:
- 1$1.55
- 3,000$0.72532
- 6,000$0.69126
- 15,000$0.66693
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Technical Details
- Series:ThunderFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
- Rds On (Max) @ Id, Vgs:50.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:28 nC @ 7.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):52W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® SO-8
- Package / Case:PowerPAK® SO-8
