IPB100N04S4H2ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 100A TO263-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB100N04S4H2ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 3,507
Can ship immediately
Pricing:
- 1$1.76
- 1,000$0.88394
- 2,000$0.82298
- 5,000$0.79249
- 10,000$0.77587
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:7180 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):115W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
