IPB123N10N3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 58A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB123N10N3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 129
Can ship immediately
Pricing:
- 1$1.83
- 1,000$0.90019
- 2,000$0.83811
- 5,000$0.80707
- 10,000$0.79014
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:12.3mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):94W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263AB)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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