IRF630
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 9A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF630 Datasheet
-
ECAD Model
- Share
In Stock: 8,319
Can ship immediately
Pricing:
- 1$1.2
- 50$0.96099
- 100$0.8408
- 500$0.65209
- 1,000$0.5148
- 2,500$0.48048
- 5,000$0.45646
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Technical Details
- Series:MESH OVERLAY™ II
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):75W (Tc)
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
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