BUK965R8-100E,118

Technical Details

• Series:Automotive, AEC-Q101, TrenchMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:5.8mOhm @ 25A, 5V
• Vgs(th) (Max) @ Id:2.1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:133 nC @ 5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:17460 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):357W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB