2SJ649-AZ
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 60V 20A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SJ649-AZ Datasheet
-
ECAD Model
- Share
In Stock: 1,586
Can ship immediately
Pricing:
- 1$1.82
- 25$1.46688
- 100$1.32033
- 500$1.0269
- 1,000$0.85084
- 2,500$0.82151
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta), 25W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220 Isolated Tab
- Package / Case:TO-220-3 Isolated Tab
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