TP65H300G4LSG

Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):8V
• Rds On (Max) @ Id, Vgs:312mOhm @ 5A, 8V
• Vgs(th) (Max) @ Id:2.6V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 8 V
• Vgs (Max):±18V
• Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):21W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:3-PQFN (8x8)
• Package / Case:3-PowerDFN