IPP111N15N3GXKSA1

Technical Details

• Series:OptiMOS™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):150 V
• Current - Continuous Drain (Id) @ 25°C:83A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):8V, 10V
• Rds On (Max) @ Id, Vgs:11.1mOhm @ 83A, 10V
• Vgs(th) (Max) @ Id:4V @ 160µA

• Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
• FET Feature:-
• Power Dissipation (Max):214W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-3
• Package / Case:TO-220-3