IMW120R220M1HXKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 1.2KV 13A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 799
Can ship immediately
Pricing:
- 1$7.83
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Technical Details
- Series:CoolSiC™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1.2 kV
- Current - Continuous Drain (Id) @ 25°C:13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):15V, 18V
- Rds On (Max) @ Id, Vgs:286mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id:5.7V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 18 V
- Vgs (Max):+23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds:289 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):75W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO247-3-41
- Package / Case:TO-247-3
