SCT2280KEC
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 1200V 14A TO247
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT2280KEC Datasheet
-
ECAD Model
- Share
In Stock: 2,183
Can ship immediately
Pricing:
- 1$11.02
- 10$9.9554
- 25$9.49172
- 100$8.24168
- 360$7.87127
- 720$7.17675
- 1,080$6.48222
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V
- Rds On (Max) @ Id, Vgs:364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id:4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs:36 nC @ 18 V
- Vgs (Max):+22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds:667 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):108W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247
- Package / Case:TO-247-3
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