GAN063-650WSAQ

Technical Details

• Series:Automotive, AEC-Q101
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:GaNFET (Cascode Gallium Nitride FET)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:34.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):143W (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3