TP65H035WS
Transphorm
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 650V 46.5A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TP65H035WS Datasheet
-
ECAD Model
- Share
In Stock: 296
Can ship immediately
Pricing:
- 1$20.81
- 10$18.91818
- 30$17.4995
- 120$16.08045
- 270$14.66161
- 510$13.71569
Quote It
Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):12V
- Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:4.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):156W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247-3
- Package / Case:TO-247-3
Related Products
SICFET N-CH 1200V 63A TO247-4L
- 1: $21.10000
MOSFET N-CH 650V 75A TO247-3
- 1: $21.82000
- 10: $19.90556
- 450: $15.60242
GANFET N-CH 650V 47.2A TO247-3
- 1: $22.85000
- 10: $20.77082
- 25: $19.21290
SICFET N-CH 900V 118A TO247-3
- 1: $24.41000
