RW1E025RPT2CR
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 2.5A 6WEMT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RW1E025RPT2CR Datasheet
-
ECAD Model
- Share
In Stock: 8,391
Can ship immediately
Pricing:
- 1$0.51
- 8,000$0.08056
- 16,000$0.07161
- 24,000$0.06713
- 56,000$0.06266
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:75mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-WEMT
- Package / Case:SOT-563, SOT-666
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