CSD25213W10
Texas Instruments
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 1.6A 4DSBGA
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 17,822
Can ship immediately
Pricing:
- 1$0.47
- 3,000$0.1327
- 6,000$0.12465
- 15,000$0.11661
Quote It
Technical Details
- Series:NexFET™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:47mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:2.9 nC @ 4.5 V
- Vgs (Max):-6V
- Input Capacitance (Ciss) (Max) @ Vds:478 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-DSBGA (1x1)
- Package / Case:4-UFBGA, DSBGA
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