RDR005N25TL

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):250 V
• Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:8.8Ohm @ 250mA, 10V
• Vgs(th) (Max) @ Id:3V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):540mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TSMT3
• Package / Case:SC-96