FDD4N60NZ
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 3.4A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDD4N60NZ Datasheet
-
ECAD Model
- Share
In Stock: 4,992
Can ship immediately
Pricing:
- 1$0.93
- 2,500$0.39455
- 5,000$0.3688
- 12,500$0.35591
- 25,000$0.34888
Quote It
Technical Details
- Series:UniFET-II™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:3.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):114W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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