SISS06DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 47.6/172.6A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 7,988
Can ship immediately
Pricing:
- 1$1.2
- 3,000$0.56473
- 6,000$0.53822
- 15,000$0.51928
Quote It
Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:47.6A (Ta), 172.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.38mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
- Vgs (Max):+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:3660 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):5W (Ta), 65.7W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
- Package / Case:PowerPAK® 1212-8S
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