- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 4A TO252
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet AOD4S60 Datasheet
-
ECAD Model
- Share
In Stock: 4,794
Can ship immediately
Pricing:
- 1$1.44
- 2,500$0.68181
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Technical Details
- Series:aMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:900mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:263 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):56.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252, (D-Pak)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
