FQU1N60CTU
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 1A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQU1N60CTU Datasheet
-
ECAD Model
- Share
In Stock: 425,015,298
Can ship immediately
Pricing:
- 1$0.72
- 10$0.63304
- 100$0.4882
- 500$0.36165
- 1,000$0.28931
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Technical Details
- Series:QFET®
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:11.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 28W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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