SISH106DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 12.5A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SISH106DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 5,811
Can ship immediately
Pricing:
- 1$1.8
- 3,000$0.84149
- 6,000$0.80198
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:6.2mOhm @ 19.5A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):1.5W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8SH
- Package / Case:PowerPAK® 1212-8SH
