IRF200B211
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 12A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF200B211 Datasheet
-
ECAD Model
- Share
In Stock: 2,188
Can ship immediately
Pricing:
- 1$1.09
- 10$0.96127
- 100$0.75971
- 500$0.58916
- 1,000$0.46513
Quote It
Technical Details
- Series:HEXFET®, StrongIRFET™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:170mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id:4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):80W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
