C3M0160120J

Technical Details

• Series:C3M™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:208mOhm @ 8.5A, 15V
• Vgs(th) (Max) @ Id:3.6V @ 2.33mA

• Gate Charge (Qg) (Max) @ Vgs:24 nC @ 15 V
• Vgs (Max):+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:632 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):90W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-7
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA