FQA55N25

ON Semiconductor
In Stock: 347

Can ship immediately

Pricing:
  • 1$6.25
  • 10$5.60107
  • 450$4.19072
  • 900$3.43146
  • 1,350$3.21453

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Technical Details

  • Series:QFET®
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:6250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):310W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-3PN
  • Package / Case:TO-3P-3, SC-65-3

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