SCT3105KLGC11

ROHM Semiconductor
In Stock: 378

Can ship immediately

Pricing:
  • 1$18.66
  • 10$17.14696
  • 25$16.43664
  • 100$14.48201
  • 450$13.77124

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):18V
  • Rds On (Max) @ Id, Vgs:137mOhm @ 7.6A, 18V
  • Vgs(th) (Max) @ Id:5.6V @ 3.81mA

 

  • Gate Charge (Qg) (Max) @ Vgs:51 nC @ 18 V
  • Vgs (Max):+22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds:574 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):134W
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247N
  • Package / Case:TO-247-3

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