SI8497DB-T2-E1
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 13A 6MICROFOOT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI8497DB-T2-E1 Datasheet
-
ECAD Model
- Share
In Stock: 5,172
Can ship immediately
Pricing:
- 1$0.62
- 3,000$0.24279
- 6,000$0.22799
- 15,000$0.2132
- 30,000$0.20283
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2V, 4.5V
- Rds On (Max) @ Id, Vgs:53mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.77W (Ta), 13W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-microfoot
- Package / Case:6-UFBGA
