SISS30DN-T1-GE3

Technical Details

• Series:TrenchFET® Gen IV
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:15.9A (Ta), 54.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
• Rds On (Max) @ Id, Vgs:8.25mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1666 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):4.8W (Ta), 57W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
• Package / Case:PowerPAK® 1212-8S