SISH112DN-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:7.5mOhm @ 17.8A, 10V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:2610 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Tc)
• Operating Temperature:-50°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 1212-8SH
• Package / Case:PowerPAK® 1212-8SH