TSM60NB1R4CH C5G
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CHANNEL 600V 3A TO251
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM60NB1R4CH C5G Datasheet
-
ECAD Model
- Share
In Stock: 21,776
Can ship immediately
Pricing:
- 1$1.02
- 10$0.89987
- 100$0.71139
- 500$0.55169
- 1,875$0.43554
- 3,750$0.40651
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.4Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.12 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:257.3 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):28.4W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-251 (IPAK)
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
