SIHD1K4N60E-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 4.2A TO252AA
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 3,073
Can ship immediately
Pricing:
- 1$1.22
- 10$1.08691
- 100$0.86537
- 500$0.67808
- 1,000$0.54184
- 2,500$0.50778
- 5,000$0.48394
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Technical Details
- Series:E
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.45Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:172 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):63W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252AA
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
