SIHD6N62E-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 620V 6A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHD6N62E-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,142
Can ship immediately
Pricing:
- 1$1.71
- 75$1.37584
- 150$1.20925
- 525$0.94751
- 1,050$0.75713
- 2,550$0.70954
- 5,025$0.67623
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):-
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:578 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):78W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-PAK (TO-252AA)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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