IRFBE30LPBF
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 4.1A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFBE30LPBF Datasheet
-
ECAD Model
- Share
In Stock: 1,801
Can ship immediately
Pricing:
- 1$2.99
- 10$2.70859
- 100$2.19298
- 500$1.72457
- 1,000$1.44353
- 3,000$1.34985
- 5,000$1.30301
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
