TK12E80W,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 11.5A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK12E80W,S1X Datasheet
-
ECAD Model
- Share
In Stock: 444
Can ship immediately
Pricing:
- 1$3.44
- 50$2.76764
- 100$2.52162
- 500$2.0419
- 1,000$1.72209
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Technical Details
- Series:DTMOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:450mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:4V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):165W (Tc)
- Operating Temperature:150°C
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
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