FCP110N65F
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 35A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FCP110N65F Datasheet
-
ECAD Model
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In Stock: 868
Can ship immediately
Pricing:
- 1$4.25
- 10$3.81028
- 100$3.14628
- 800$2.33455
- 1,600$2.18696
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Technical Details
- Series:FRFET®, SuperFET® II
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:110mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id:5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4895 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):357W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
