IPP65R125C7XKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 18A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP65R125C7XKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 514
Can ship immediately
Pricing:
- 1$4.7
- 10$4.19377
- 100$3.43901
- 500$2.78479
- 1,000$2.34861
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Technical Details
- Series:CoolMOS™ C7
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:125mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id:4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):101W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3
- Package / Case:TO-220-3
