IPA028N08N3GXKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 80V 89A TO220-FP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPA028N08N3GXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 821
Can ship immediately
Pricing:
- 1$6.55
- 10$5.84754
- 100$4.79479
- 500$3.88259
- 1,000$3.27448
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Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:2.8mOhm @ 89A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:14200 pF @ 40 V
- FET Feature:-
- Power Dissipation (Max):42W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-FP
- Package / Case:TO-220-3 Full Pack
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