GA20JT12-263
GeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS SJT 1200V 45A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet GA20JT12-263 Datasheet
-
ECAD Model
- Share
In Stock: 239
Can ship immediately
Pricing:
- 1$38.13
- 10$35.26921
- 50$32.40905
- 100$30.12134
- 250$27.64305
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:-
- Technology:SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:60mOhm @ 20A
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:3091 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):282W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK (7-Lead)
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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